Long Wavelength Infrared Detector with Heterojunction.
Patent Application, Filed 18 Jun 90,
DEPARTMENT OF THE NAVY WASHINGTON DC
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An infrared radiation detector having a first semiconductor layer deposited on a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact. Patent applications. SDW
- Infrared Detection and Detectors