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Non-Volatile Memory Cell with Ferroelectric Capacitor Having Logically Inactive Electrode.
Patent Application, Filed 6 Mar 90,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
This invention relates to improvements in non-volatile, self restoring memories as referred to and disclosed in my prior copending application, Serial No. 54,973, filed May 5, 1987, with respect to which the present application is a continuation-in-part. According to the disclosure in my aforementioned prior copending application, which is incorporated herein by reference, the top electrode plate of the capacitor in each of the cells of a ferroelectric memory array was logically active incontrolling capacitor polarization by a controlled supply of high and low voltages thereto. The logic drive circuitry necessary to control the supply of such different voltages to the top electrode plates of the capacitors in the memory cells, renders the associated memory array somewhat costly to manufacture and dimensionally extensive. Keywords Patent applications. JES
APPROVED FOR PUBLIC RELEASE