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Accession Number:
ADD014527
Title:
A Room-Temperature, Laser Diode-Pumped, Q-Switched, 2 Micron, Thulium-Doped, Solid State Laser.
Descriptive Note:
Patent Application, Filed 30 Mar 90,
Corporate Author:
DEPARTMENT OF THE NAVY WASHINGTON DC
Report Date:
1990-03-30
Pagination or Media Count:
18.0
Abstract:
A room-temperature, laser-pumped, Q-switched, thulium-doped, solid state laser for producing pulses of laser emission at substantially 2 microns is disclosed. In a preferred embodiment, the laser comprises a laser cavity defined by first and second reflective path elements opposing each other on a common axis to form a reflective path there between a laser crystal disposed in the laser cavity, the laser crystal having a host material doped with an amount of thulium activator ions sufficient to produce a laser emission at substantially 2 microns from the 3F4 to 3H6 laser transition in the thulium activator ions when the laser crystal is enabled and is pumped by a CW pump beam at a preselected wavelength a pump laser for pumping the laser crystal with the CW pump beam at the preselected wavelength and a Q-switch disposed in the laser cavity between the laser crystal and the second reflective element for periodically enabling the laser crystal to produce a pulsed laser emission at substantially 2 microns when the crystal is also pumped by the CW pump beam. Patent applications. jhd
Distribution Statement:
APPROVED FOR PUBLIC RELEASE