Accession Number:

ADD014523

Title:

High Frequency, Frequency Multiplier Using Parallel Gunn Diodes.

Descriptive Note:

Patent Application, Filed 30 Mar 90,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Ancona, Mario

Report Date:

1990-03-30

Pagination or Media Count:

22.0

Abstract:

An object of this invention is to increase the frequency of a Gunn effect oscillator by at least an integer factor. In its broadest form, the invention is a Gunn-effect frequency multiplier having a plurality of semiconducting elements capable of supporting Gunn-effect domains a cathode and an anode, common to all said semiconducting elements, connecting said elements in parallel and means for sequentially creating a dipole domain in each of said semiconducting elements during a time substantially less than or equal to the shortest transit time of a dipole domain between said anode for any of said semiconducting elements. Patent application. jes

Descriptors:

• *GUNN DIODES
• *SEMICONDUCTOR DEVICES
• DIPOLES
• FREQUENCY MULTIPLIERS
• GUNN EFFECT
• HIGH FREQUENCY
• NUMBERS
• OSCILLATORS
• PARALLEL ORIENTATION
• PATENT APPLICATIONS

Subject Categories:

• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE