High Frequency, Frequency Multiplier Using Parallel Gunn Diodes.
Patent Application, Filed 30 Mar 90,
DEPARTMENT OF THE NAVY WASHINGTON DC
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An object of this invention is to increase the frequency of a Gunn effect oscillator by at least an integer factor. In its broadest form, the invention is a Gunn-effect frequency multiplier having a plurality of semiconducting elements capable of supporting Gunn-effect domains a cathode and an anode, common to all said semiconducting elements, connecting said elements in parallel and means for sequentially creating a dipole domain in each of said semiconducting elements during a time substantially less than or equal to the shortest transit time of a dipole domain between said anode for any of said semiconducting elements. Patent application. jes
- Electricity and Magnetism