Accession Number:

ADD014491

Title:

Sensitization Pretreatment of PB-Salt Epitaxial Films for Schottky Diodes by Sulfur Vapor Exposure.

Descriptive Note:

Patent, Filed 19 Jul 89, patented 13 Feb 90,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1990-02-13

Pagination or Media Count:

7.0

Abstract:

This abstract discloses a process for preparing an infrared sensitive photodiode comprising the steps of 1 forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of Lead Selenide, Lead Telluride, PbSexTe1-x, PbySn1-ySe, PbySn1-yTe, PbySn1-ySexTe1-x, PbzCdl-zSe, Pbz Cdl-zTe, and PbzCdl-zSexTel-x, wherein 0x1,0y1, and 01, to cover at least a portion of the surface of a substrate composed of an infrared transparent single crystal material selected from the group consisting of alkali metal halides and alkaline earth halides coating the epitaxial layer of semiconductor alloy material with a thin layer of a lead halide selected from the group consisting of Lead chloride, Lead bromide, Lead fluoride, and mixtures thereof by exposing the epitaxial layer alloy material to vapor of the lead halide in the presence of a gas selected from the group consisting of air, oxygen, and oxygeninert gas mixtures 3 vacuum depositing Pb metal onto a portion of the lead halide coated epitaxial layer of semiconductor alloy material to form a non-Ohmic Pb metal contact and 4 forming an Ohmic contact on another portion of epitaxial layer of semiconductor alloy materials. Patents. AW

Subject Categories:

  • Solid State Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE