Accession Number:

ADD014488

Title:

Bloch-Line Memory Element and RAM Memory.

Descriptive Note:

Patent, Filed 28 May 87, patented 13 Feb 90,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Schwee, Leonard J.

Report Date:

1990-02-13

Pagination or Media Count:

12.0

Abstract:

The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element having magnetic domains separated by a wall which contains a Bloch-line disposed within the individual memory element. Coincident write lines interact with the magnetic element for writing a Bloch-line to a predetermined area within the memory element. For sensing the presence or absence of a Bloch-line within the predetermined area, one write conductor and a sense line are used for determining the logic state of the particular memory element. A plurality of memory elements are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words. Keywords Data storage systems Memory devices Patents. kt

Descriptors:

• *DATA STORAGE SYSTEMS
• *MAGNETIC MATERIALS
• *MEMORY DEVICES
• *PATENTS
• *RANDOM ACCESS COMPUTER STORAGE
• LOGIC
• MAGNETIC DOMAINS
• MAGNETIC FIELDS
• NONVOLATILE MEMORIES
• PLANAR STRUCTURES

Subject Categories:

• Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE