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Detection of Oxygen in Thin Films.
Patent, Filed 29 Sep 86, patented 12 Jan 88,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
This invention pertains to the field of measurement and testing. More particularly, the invention pertains to measurement of the gas content of material. The subject invention involves the deposition, on a first thin film layer which requires deposition in the presence of a substance which would otherwise escape from the layer prior to analysis of the layer for the substance, of a second layer, which captures the substance for subsequent analysis in the second layer, and involves the deposition on the second layer of a third layer which seals the second layer of a third layer which seals the second layer against entry of the substance from the environment. It is an object of the present invention to provide a method for the determination of the presence of such a substance in the first layer during deposition of the substance in a substrate. Another object is to provide a method using relatively simple and conventional apparatus in analysis for such a substance in a different vacuum chamber than that in which the first layer was deposited and after transfer of the films and substrate through the usual ambient terrestrial environment. A further object is to provide such a method particularly useful for determining the presence of oxygen within a growing Niobium Germanium film during vacuum deposition thereof at a relatively high temperature. Patents. AW
APPROVED FOR PUBLIC RELEASE