Accession Number:

ADD014410

Title:

Sensitized Epitaxial Infrared Detector.

Descriptive Note:

Patent, Filed 17 Mar 82, patented 10 Apr 84,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Bouley, Alan C.
• Riedl, Harold R.
• Jensen, James D.
• Jost, Steven R.

Report Date:

1984-04-10

Pagination or Media Count:

4.0

Abstract:

An infrared sensitive photodiode which is made of an epitaxial layer of a semiconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on single crystal substrate of an infrared transparent, electrically insulating material, on Ohmic contact deposited on the epitaxial layer, and an non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material. Keywords Patents, PAT-CL-357-30. KR

Descriptors:

• *INFRARED DETECTORS
• *PATENTS
• ALLOYS
• CADMIUM ALLOYS
• CHALCOGENS
• ELECTRIC CONTACTS
• EPITAXIAL GROWTH
• HALIDES
• INFRARED RADIATION
• INTERFACES
• IONS
• LAYERS
• LEAD ALLOYS
• LEAD COMPOUNDS
• MATERIALS
• METAL CONTACTS
• PHOTODIODES
• REGIONS
• SCHOTTKY BARRIER DEVICES
• SEMICONDUCTORS
• SENSITIVITY
• SENSITIZING
• SINGLE CRYSTALS
• SUBSTRATES
• TIN COMPOUNDS

Subject Categories:

• Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE