Accession Number:

ADD014386

Title:

Three-Mirror Active-Passive Semiconductor Laser.

Descriptive Note:

Patent, Filed 7 Jun 82, patented 11 Dec 84,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Garmire, Elsa M.
• Evans, Gary A.
• Niesen, W.

Report Date:

1984-12-11

Pagination or Media Count:

8.0

Abstract:

Disclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely spaced dual mode operation, and narrow-band multimode operation. Keywords Patents, PAT-CL-372-50. KR

Descriptors:

• *SEMICONDUCTOR LASERS
• *PATENTS
• CAVITIES
• MIRRORS
• MULTIMODE
• NARROWBAND
• OPERATION
• PASSIVE SYSTEMS
• SHORT RANGE(TIME)

Subject Categories:

• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE