Passivating Layer for III-V Semiconductor Materials.
Patent, Filed 30 Mar 88, patented 9 May 89,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This invention relates to a semiconductor structure in which an epitaxial semiconductor layer is used to electrically passivate and insulate the semiconductor on which it is deposited. In todays world, developments in electronic devices demand faster and faster reaction speed. We have found that the Zinc Selenide binary semiconductors and alloys of this invention having the general formula Zn1-x-yMxQySeD provide a suitable passivating layer for III-V semiconductor materials which sufficiently minimizes surface state density, surface charge accumulation or charge carrier recombination to significantly improve practical electronic device operation. PAT-CL-428-642. jes
- Electrical and Electronic Equipment
- Solid State Physics