Accession Number:

ADD014321

Title:

Passivating Layer for III-V Semiconductor Materials.

Descriptive Note:

Patent, Filed 30 Mar 88, patented 9 May 89,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1989-05-09

Pagination or Media Count:

5.0

Abstract:

This invention relates to a semiconductor structure in which an epitaxial semiconductor layer is used to electrically passivate and insulate the semiconductor on which it is deposited. In todays world, developments in electronic devices demand faster and faster reaction speed. We have found that the Zinc Selenide binary semiconductors and alloys of this invention having the general formula Zn1-x-yMxQySeD provide a suitable passivating layer for III-V semiconductor materials which sufficiently minimizes surface state density, surface charge accumulation or charge carrier recombination to significantly improve practical electronic device operation. PAT-CL-428-642. jes

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE