Accession Number:
ADD014230
Title:
Fabrication of NBN Based Electronic Devices with Silicon Barriers.
Descriptive Note:
Patent Application, Filed 30 Jun 89,
Corporate Author:
DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s):
Report Date:
1989-06-30
Pagination or Media Count:
12.0
Abstract:
A method of making a Josephson Junction is disclosed which includes the steps of depositing a base electrode layer of a refractory superconducting material on a substrate, depositing a first a passivation layer on the base electrode, depositing a barrier layer of refractory insulating semiconducting material on the passivation layer, depositing a second passivation layer on the barrier layer, and depositing a counter electrode on the second passivation layer. The layers are deposited at a substrate temperature of from about 5 C to about 7 C in an Ultra-High Vacuum sputtering system at a base pressure of less than or equal to 5 x 10 to the 8th power Torr. In the preferred embodiment a base electrode and counter electrode of NbN are separated by a barrier layer of hydrogenated silicon. When exposed to high post processing temperatures this structure maintains a chemically stable interface with the substrate. Keywords Patent applications. RH
Descriptors:
- *BARRIERS
- *JOSEPHSON JUNCTIONS
- *PATENT APPLICATIONS
- *SEMICONDUCTORS
- *SILICON
- BASE PRESSURE
- CHEMICAL PROPERTIES
- ELECTRODES
- ELECTRONIC EQUIPMENT
- HIGH TEMPERATURE
- INSULATION
- INTERFACES
- LAYERS
- PASSIVITY
- PROCESSING
- REFRACTORY MATERIALS
- SPUTTERING
- STABILITY
- SUBSTRATES
- SUPERCONDUCTORS
- TEMPERATURE
- ULTRAHIGH VACUUM
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics