Accession Number:

ADD014230

Title:

Fabrication of NBN Based Electronic Devices with Silicon Barriers.

Descriptive Note:

Patent Application, Filed 30 Jun 89,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Cukauskas, Edward
• Carter, William

Report Date:

1989-06-30

Pagination or Media Count:

12.0

Abstract:

A method of making a Josephson Junction is disclosed which includes the steps of depositing a base electrode layer of a refractory superconducting material on a substrate, depositing a first a passivation layer on the base electrode, depositing a barrier layer of refractory insulating semiconducting material on the passivation layer, depositing a second passivation layer on the barrier layer, and depositing a counter electrode on the second passivation layer. The layers are deposited at a substrate temperature of from about 5 C to about 7 C in an Ultra-High Vacuum sputtering system at a base pressure of less than or equal to 5 x 10 to the 8th power Torr. In the preferred embodiment a base electrode and counter electrode of NbN are separated by a barrier layer of hydrogenated silicon. When exposed to high post processing temperatures this structure maintains a chemically stable interface with the substrate. Keywords Patent applications. RH

Descriptors:

• *BARRIERS
• *JOSEPHSON JUNCTIONS
• *PATENT APPLICATIONS
• *SEMICONDUCTORS
• *SILICON
• BASE PRESSURE
• CHEMICAL PROPERTIES
• ELECTRODES
• ELECTRONIC EQUIPMENT
• HIGH TEMPERATURE
• INSULATION
• INTERFACES
• LAYERS
• PASSIVITY
• PROCESSING
• REFRACTORY MATERIALS
• SPUTTERING
• STABILITY
• SUBSTRATES
• SUPERCONDUCTORS
• TEMPERATURE
• ULTRAHIGH VACUUM

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE