Accession Number:

ADD014210

Title:

Monolithic Laser Diode Structure for Microwave Generation.

Descriptive Note:

Patent Application, Filed 4 May 89,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Goldberg, Lew
• Weller, Joseph F.

Report Date:

1989-05-04

Pagination or Media Count:

20.0

Abstract:

A semiconductor laser structure for generating high frequency modulation of light intensity is disclosed. The apparatus comprises a semiconductor substrate, a semiconductor master laser and first and second semiconductor slave lasers fabricated adjacent to each other on the semiconductor substrate. Bias current applied to the master oscillator is modulated at a preselected frequency to cause the master laser to generate a plurality of optical frequency modulation sidebands, The first and second slave lasers, which are tuned to be close to the preselected first and second sidebands of the master laser, are injection-locked to the first and second preselected sidebands of the master laser. Patent applications. RH

Descriptors:

• *MICROWAVES
• *MONOLITHIC STRUCTURES(ELECTRONICS)
• *OSCILLATORS
• *PATENT APPLICATIONS
• *SEMICONDUCTOR LASERS
• *SEMICONDUCTORS
• BIAS
• DIODES
• FREQUENCY MODULATION
• HIGH FREQUENCY
• INTENSITY
• LASERS
• LIGHT
• OPTICAL PROPERTIES
• SIDEBANDS
• SUBSTRATES

Subject Categories:

• Lasers and Masers
• Solid State Physics
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE