Accession Number:
ADD014177
Title:
Niobium and Niobium Nitride Contacts on Semiconducting Material.
Descriptive Note:
Patent Application, Filed 30 Jun 89,
Corporate Author:
DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s):
Report Date:
1989-06-30
Pagination or Media Count:
19.0
Abstract:
This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated circuit structure which can function from the superconducting temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high temperature post processing. These materials provide a low resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures. Keywords Patent applications Thin films Super conducting semiconductors. AW
Descriptors:
- *GALLIUM ARSENIDES
- *INTEGRATED CIRCUITS
- *NIOBIUM
- *NITRIDES
- *PATENT APPLICATIONS
- *SEMICONDUCTORS
- *ELECTRIC CONTACTS
- CHEMICALS
- HEAT
- HIGH TEMPERATURE
- LAYERS
- LOW TEMPERATURE
- MATERIALS
- METALLIZING
- NIOBIUM COMPOUNDS
- PROCESSING
- RANGE(EXTREMES)
- ELECTRICAL RESISTANCE
- ROOM TEMPERATURE
- STABILITY
- SUBSTRATES
- SUPERCONDUCTIVITY
- SUPERCONDUCTORS
- TEMPERATURE
- THIN FILMS
- SCHOTTKY BARRIER DEVICES
Subject Categories:
- Solid State Physics
- Electrical and Electronic Equipment