Accession Number:

ADD014177

Title:

Niobium and Niobium Nitride Contacts on Semiconducting Material.

Descriptive Note:

Patent Application, Filed 30 Jun 89,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

• Cukauskas, Edward
• Carter, William
• Pond, Jeffrey
• Newman, Harvey

Report Date:

1989-06-30

Pagination or Media Count:

19.0

Abstract:

This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated circuit structure which can function from the superconducting temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high temperature post processing. These materials provide a low resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures. Keywords Patent applications Thin films Super conducting semiconductors. AW

Descriptors:

• *GALLIUM ARSENIDES
• *INTEGRATED CIRCUITS
• *NIOBIUM
• *NITRIDES
• *PATENT APPLICATIONS
• *SEMICONDUCTORS
• *ELECTRIC CONTACTS
• CHEMICALS
• HEAT
• HIGH TEMPERATURE
• LAYERS
• LOW TEMPERATURE
• MATERIALS
• METALLIZING
• NIOBIUM COMPOUNDS
• PROCESSING
• RANGE(EXTREMES)
• ELECTRICAL RESISTANCE
• ROOM TEMPERATURE
• STABILITY
• SUBSTRATES
• SUPERCONDUCTIVITY
• SUPERCONDUCTORS
• TEMPERATURE
• THIN FILMS
• SCHOTTKY BARRIER DEVICES

Subject Categories:

• Solid State Physics
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE