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Accession Number:
ADD014177
Title:
Niobium and Niobium Nitride Contacts on Semiconducting Material.
Descriptive Note:
Patent Application, Filed 30 Jun 89,
Corporate Author:
DEPARTMENT OF THE NAVY WASHINGTON DC
Report Date:
1989-06-30
Pagination or Media Count:
19.0
Abstract:
This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated circuit structure which can function from the superconducting temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high temperature post processing. These materials provide a low resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures. Keywords Patent applications Thin films Super conducting semiconductors. AW
Distribution Statement:
APPROVED FOR PUBLIC RELEASE