Accession Number:

ADD014124

Title:

Radiation-Induced Substrate Photo-Current Compensation Apparatus.

Descriptive Note:

Patent Application, Filed 21 Mar 88,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

• Hughes, Arlen J.

Report Date:

1988-03-21

Pagination or Media Count:

19.0

Abstract:

A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor. Patent applications. rh

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *PATENT APPLICATIONS
• *RADIATION
• *SAPPHIRE
• *SEMICONDUCTORS
• *SILICON
• *SUBSTRATES
• COMPENSATION
• DRAINAGE
• ELECTRODES
• GEOMETRY
• PRECISION

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE