Method and Apparatus for Synthesizing a Single Crystal of Indium Phosphide.
Patent, filed 8 Oct 86, patented 16 Aug 88,
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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A method for synthesizing and growing a single crystal of indium phosphide includes vacuum baking and purifying of elemental indium prior to reacting it with red phosphorus within the same apparatus. The steps growth take place in a vertical apparatus by placing the reaction components within a reaction vessel that is sealed under vacuum after the purification and then heated and cooled within predetermined temperature limits to react indium with red phosphorus to synthesize molten indium phosphide and a single crystal of indium phosphide by cooling the molten indium phosphide with a controlled temperature atmosphere. Excess phosphorus is maintained during growth to eliminate the need for encapsulation of the growth melt. Patents. MJM
- Inorganic Chemistry