Accession Number:

ADD013989

Title:

Ion-Sensitive Photodetector.

Descriptive Note:

Patent, Filed 1 Dec 86, patented 20 Dec 88,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1988-12-20

Pagination or Media Count:

5.0

Abstract:

A photodetector using a modified ion-sensitive field effect transistor has therein a layer of photoactive material. Upon exposure to a beam of light the photoactive material produces a charge-separation with proton movement therein which affects the drain current. The change in gate voltage to stabilizes the drain current is a measure of the intensity of the light input. Patents. rh

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE