Accession Number:

ADD013917

Title:

Platinum and Platinum Silicide Contacts on Beta-Silicon Carbide Specification.

Descriptive Note:

Patent Application, Filed 25 Oct 88,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1988-10-25

Pagination or Media Count:

13.0

Abstract:

This invention relates to contact metallization on silicon carbide, specifically, to Schottky contacts of platinum and platinum silicide on Beta-silicon carbide. It is an object of this invention to provide a rugged and thermally stable rectifying contact metallization on SiC for high temperature semiconductor device applications. Additionally, it is an object of this invention to provide a Schottky metallization which has higher thermal stability than conventional gold metallization. Further, it is an object of this invention to provide a Schottky metallization which has superior adhesion properties to conventional gold metallization. Patent applications. JES

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE