Platinum and Platinum Silicide Contacts on Beta-Silicon Carbide Specification.
Patent Application, Filed 25 Oct 88,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This invention relates to contact metallization on silicon carbide, specifically, to Schottky contacts of platinum and platinum silicide on Beta-silicon carbide. It is an object of this invention to provide a rugged and thermally stable rectifying contact metallization on SiC for high temperature semiconductor device applications. Additionally, it is an object of this invention to provide a Schottky metallization which has higher thermal stability than conventional gold metallization. Further, it is an object of this invention to provide a Schottky metallization which has superior adhesion properties to conventional gold metallization. Patent applications. JES
- Inorganic Chemistry