Method of Sensitizing Pb-Salt Epitaxial Films for Schottky Diodes.
Patent Application, Filed 27 Jul 88,
DEPARTMENT OF THE NAVY WASHINGTON DC
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Accordingly, an object of this invention is to provide an improved method of producing infrared sensitive Schottky barrier devices. Another object of this invention is to reduce the time it takes to produce the reliable, high performance lead halide sensitized infrared detector Schottky barrier devices. These and other objects of this invention are accomplished by providing in a process for preparing an infrared sensitive photodiode comprising the steps of 1 forming by vacuum deposition an epitaxial layer of a semiconductor alloy material. 2 vacuum depositing lead metal onto a portion of the epitaxial layer of semiconductor alloy material to form a non-Ohmic Pb metal contact and 3 forming an Ohmic contact on another portion of the epitaxial layer of semiconductor alloy material. Patent applications. mjm
- Infrared Detection and Detectors
- Inorganic Chemistry