Accession Number:

ADD013828

Title:

Atomic Layer Etching.

Descriptive Note:

Patent, Filed 31 Aug 87, patented 12 Jul 88,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1988-07-12

Pagination or Media Count:

7.0

Abstract:

This patent discloses an apparatus, and method therefor, for removing a single atomic layer from the surface of a crystalline diamond. In a preferred embodiment, the apparatus comprises a first delivery system for flooding the surface of the diamond with a pulse of nitrogen dioxide during a first phase of operation to cause a monolayer of nitrogen oxide to be adsorbed to the surface of the diamond and a second delivery system for impacting the surface of the diamond with a pulse of ions of mixed noble and hydrogen gases during a second phase of operation in order to remove a single atomic layer from the surface of the diamond. In a preferred method for removing a single atomic layer from the surface of a crystalline diamond, the method comprises the steps of flooding the diamond surface with a pulse of nitrogen dioxide during the first phase of operation and impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gases during a second phase of operation in order to remove a single atomic layer from the surface of the diamond. jhd

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE