Accession Number:

ADD013791

Title:

Method of Forming Silicon Carbide Films on Tantalum Containing Substrates.

Descriptive Note:

Patent, Filed 29 Aug 85,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1988-05-17

Pagination or Media Count:

3.0

Abstract:

A process for forming a smooth, continuous coating of silicon carbide upon tantalum carbide is disclosed, as are several useful manufacturers produced with the process. A tantalum carbide substrate may be formed directly upon metallic tantalum articles by disclosed means. The material formed with this process has been used to fabricate semiconducting devices including light emitting diodes and selective thermal radiators which can be operated at 1200 degrees C. The method is further useful for producing tantalum metal incandescent light filaments and corrosion resistant tantalum articles.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE