Method of Forming Silicon Carbide Films on Tantalum Containing Substrates.
Patent, Filed 29 Aug 85,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
A process for forming a smooth, continuous coating of silicon carbide upon tantalum carbide is disclosed, as are several useful manufacturers produced with the process. A tantalum carbide substrate may be formed directly upon metallic tantalum articles by disclosed means. The material formed with this process has been used to fabricate semiconducting devices including light emitting diodes and selective thermal radiators which can be operated at 1200 degrees C. The method is further useful for producing tantalum metal incandescent light filaments and corrosion resistant tantalum articles.
- Inorganic Chemistry
- Electrical and Electronic Equipment