Transition and Inner Transition Metal Chelate Polymers for High Energy Resist Lithography.
Patent, Filed 14 Mar 85, patented 15 Sep 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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New transition and inner transition metal chelate polymers and method for synthesizing thereof. Such polymers are used as positive or negative resists of high sensitivity for lithographic purposes in integrated circuit chip fabrication requiring submicron resolution. The polymers when irradiated undergo scission or crosslinking events which affects their solubility in developer solvents. They are synthesized either in nonaqueous solution with subsequent removal of excess solvent or interfacially with almost instantaneous precipitation of the polymer at the interface.
- Inorganic Chemistry
- Polymer Chemistry