Formation of Thin-Film Resistors on Silicon Substrates.
Patent Application, Filed 26 Feb 88,
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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The present invention relates broadly to thin-film resistors and in particular to the formation of thin-film resistors on silicon substrates by ion implantation. A method of making thin film resistor structures for radiation-hardened integrated circuits is disclosed. The resistor is formed using a thin-film metallic conductor layer such as tantalum or chromium silicide which is deposited by ion implantation on the surface of fused phosphosilicate glass PSC or borophosphosilicate glass BPSG substrate. Implantation is at an energy level which provides sufficient penetration to insure good adhesion and the resistor is annealed at temperatures up to 700 C. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate. Advantages of ion implantation include very accurate control of dosage, and good adhesion of deposited films.
- Electrical and Electronic Equipment