Method of Etching Zirconium Diboride.
Patent Application, Filed 31 Mar 88,
DEPARTMENT OF THE ARMY WASHINGTON DC
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The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching zirconium diboride, zirconium diborideZrB2 and in particular to a method of dry etching a thin film of ZrB2 that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB2, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures.
- Electrical and Electronic Equipment
- Solid State Physics