Ion Sensitive Photodetector.
Patent, Filed 3 Nov 86, patented 19 Jan 88,
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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A photodetector using a modified gate controlled diode has therein a layer of photoactive material. Photons interacting therein cause the formation of free protons which alter the electrical characteristics of the photodetector. The change in electrical characteristics is measureable and related to the intensity of photons received.
- Nuclear Physics and Elementary Particle Physics
- Electrical and Electronic Equipment
- Solid State Physics