An Article Consisting of a Silicon Carbide Layer on a High Resistivity Substrate and a Process for Making Such Article.
Patent Application, Filed 28 Dec 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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An article comprised of the combination of a SiC semiconductor layer on a high-resistivity, poly-crystalline silicon substrate, as well as a method for making such article, is disclosed. The method for making such article comprises the steps of depositing a layer of SiC on a Si substrate depositing a layer of high-resistivity, polycrystalline silicon on a free surface of the SiC layer protecting the layer of poly-crystalline silicon with a masking material removing the Si substrate, thereby leaving the layer of poly-crystalline silicon as the surrogate substrate of the SiC layer and removing the masking material.
- Inorganic Chemistry