Accession Number:

ADD013638

Title:

An Article Consisting of a Silicon Carbide Layer on a High Resistivity Substrate and a Process for Making Such Article.

Descriptive Note:

Patent Application, Filed 28 Dec 87,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1987-12-28

Pagination or Media Count:

16.0

Abstract:

An article comprised of the combination of a SiC semiconductor layer on a high-resistivity, poly-crystalline silicon substrate, as well as a method for making such article, is disclosed. The method for making such article comprises the steps of depositing a layer of SiC on a Si substrate depositing a layer of high-resistivity, polycrystalline silicon on a free surface of the SiC layer protecting the layer of poly-crystalline silicon with a masking material removing the Si substrate, thereby leaving the layer of poly-crystalline silicon as the surrogate substrate of the SiC layer and removing the masking material.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE