Accession Number:

ADD013633

Title:

Generation of Ohmic Contacts on Indium Phosphide.

Descriptive Note:

Patent, Filed 28 Jan 86, patented 5 May 87,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1987-05-05

Pagination or Media Count:

6.0

Abstract:

A process for forming low resistance ohmic contacts on indium phosphide InP avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor. Passage of the current causes the contacts to combine with the semiconductor via field assisted thermal diffusion.

Subject Categories:

  • Solid State Physics
  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE