Generation of Ohmic Contacts on Indium Phosphide.
Patent, Filed 28 Jan 86, patented 5 May 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A process for forming low resistance ohmic contacts on indium phosphide InP avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor. Passage of the current causes the contacts to combine with the semiconductor via field assisted thermal diffusion.
- Solid State Physics
- Electrical and Electronic Equipment
- Electricity and Magnetism