Single Crystal Thin Films.
Patent, Filed 28 May 86, patented 17 Nov 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A system and techniques are disclosed for forming single crystal films with the use of energy sources that can create shaped hot zones. The energy may be from any source provided that it can be shaped, directed and can heat the film to become molten and recrystallized by the liquid phase epitaxy. The hot zone created by the heat source is shaped such that the angle defined by the scanned hot zones trailing liquid edge is smaller than the angle defined by the intersection of the crystals slowest growth planes.
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