Diallyl Telluride and Synthesis of Diorgano Tellurides.
Patent Application, Filed 26 Jun 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A new, symmetrical dialkyl telluride compound has been synthesized and found to be useful as a tellurium source compound in the Metal Organic Chemical Vapor Deposition film growth process. The procedure for preparing other diorgano tellurides. The new compound and other diorgano telluride compounds are prepared from alkali metal tellurides obtained by an efficient reaction between an alkali metal and tellurium in a naphthalenetetrahydrofuran solution. An alkali metal telluride then reacts with an organo halide to form a final product which is isolated by filtration followed by vacuum distillation. An object of this invention is the new compound diallyl telluride. Another object of this invention is an efficient, high yield process for preparing diallyl telluride and other symmetrical as well as non-symmetrical diorgano telluride compounds. A further object of this invention is a synthesis of diorgano tellurides from alkali metal telluride compounds obtained by an efficient reaction between an alkali metal and tellurium.
- Organic Chemistry
- Solid State Physics