Method for Fabricating Lead Halide Sensitized Infrared Photodiodes.
Patent, Filed 17 Mar 82, patented 27 Sep 83,
DEPARTMENT OF THE NAVY WASHINGTON DC
Pagination or Media Count:
Accordingly, an object of this invention is to provide an improved method of producing infrared sensitive Schottky barrier devices. Another object of this invention is to reduce the number of rejects resulting during the production of infrared sensitive Schottky barrier diodes. A further object of this invention is to provide a process of making infrared sensitive Schottky barrier devices with greater control over the sensitivities of those devices.
- Electrical and Electronic Equipment