Yoked, Orthogonally Distributed Equal Reactance Amplifier.
Patent Application, Filed 27 Aug 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A field effect transistor device especially useful in common gate amplifier circuits for use with millimeter wave and microwave signals. By forming the device in a unitary monolith, and by making the devices source to gate and drain to gate geometry identical, the input and output portions of the device are symmetric and impedance matched, increasing the device power handling capacity. The devices source and drain contain heavily doped regions which operate to increase the devices upper frequency range, and also act as inherent channel end stops. In several embodiments, plural such devices are yoked together integrally source to drain, eliminating common structures of adjacent stages, simplifying the devices and its fabrication, and permitting traveling wave amplification.
- Electrical and Electronic Equipment
- Solid State Physics