Method for Producing High Quality Germanium-Germanium Nitride Interfaces for Germanium Semiconductors and Device Produced Thereby.
Patent, Filed 22 Mar 85, patented 9 Jun 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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The present invention relates to the production of a stable insulator of a germanium and a device produced thereby. A germanium substrate is provided with a layer of silicon nitride deposited on one of the outer surfaces. Ionized nitrogen is implanted by an ion beam into the silicon nitride layer. An electric field is applied across the substrate and layer. In one embodiment the substrate and layer are annealed while maintaining the electric field, the electric field is removed, and a second annealing step grows the germanium nitride insulator layer subcutaneously. In another embodiment the subcutaneous germanium nitride insulator layer is grown during single annealing step by continued application of the electric field to the substrate and the layer.
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