Thermally-Activated Vapor Etchant for INP.
Patent, Filed 18 Nov 85, patented 9 Jun 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This patent discusses vapor from liquid ethylene dibromide EDB functions in manner superior to anhydrous HCI for in situ gas phase etching of InP substrates in Metalorganic Vapor Phased Epitaxy MOVPE. The etch rate and surface morphology behaviors have been determined for conditions useful as a substrate cleaning step prior to growth of InP and InGaAs epilayers. The thermally activated decomposition and etching are analogous to group III-V semiconductor growth processes the behavior in different carrier gas mixtures demonstrates dependence on gas phase reactions in the heated vapor above the substrate.
- Solid State Physics
- Physical Chemistry