Accession Number:

ADD013442

Title:

Method for Etch Thinning Silicon Devices.

Descriptive Note:

Patent, Filed 26 Sep 80, patented 8 Feb 83,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1983-02-08

Pagination or Media Count:

5.0

Abstract:

An improved method for etch-thinning silicon devices using three sequential etches. The device is pre-thinned in a hot KOH-H2O etch. The thinning etch is a hydrofluoric, nitric, acetic acids 1310 and a precise amount of hydrogen peroxide mixture. The cleanup etch is a potassium permanganate, hydrofluoric and acetic acids mixture. The result is a repeatedly specular, smooth, uniform, 10 micron thick membrane over the pixels with a p surface to enhance the CCI optical response.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE