Method for Etch Thinning Silicon Devices.
Patent, Filed 26 Sep 80, patented 8 Feb 83,
DEPARTMENT OF THE NAVY WASHINGTON DC
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An improved method for etch-thinning silicon devices using three sequential etches. The device is pre-thinned in a hot KOH-H2O etch. The thinning etch is a hydrofluoric, nitric, acetic acids 1310 and a precise amount of hydrogen peroxide mixture. The cleanup etch is a potassium permanganate, hydrofluoric and acetic acids mixture. The result is a repeatedly specular, smooth, uniform, 10 micron thick membrane over the pixels with a p surface to enhance the CCI optical response.
- Inorganic Chemistry