Direct Moat Self-Aligned Field Oxide Technique.
Patent, Filed 21 Oct 85, patented 11 Aug 87,
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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The process of the present invention produces CMOS bulk circuits allowing any treatment of the field oxide up to and including the channel edge allows p-field boron implant to increase parasitic threshold eliminates the birds beak oxide encroachment which reduces channel width and recessed oxide along the channel edge provides for a self-aligned p-field implant and provides for a spacer use on a self-aligned p-field implant to offset effects of side diffusion and oxide undercut.
- Solid State Physics
- Electrical and Electronic Equipment