Accession Number:

ADD013343

Title:

Direct Moat Self-Aligned Field Oxide Technique.

Descriptive Note:

Patent, Filed 21 Oct 85, patented 11 Aug 87,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Report Date:

1987-08-11

Pagination or Media Count:

5.0

Abstract:

The process of the present invention produces CMOS bulk circuits allowing any treatment of the field oxide up to and including the channel edge allows p-field boron implant to increase parasitic threshold eliminates the birds beak oxide encroachment which reduces channel width and recessed oxide along the channel edge provides for a self-aligned p-field implant and provides for a spacer use on a self-aligned p-field implant to offset effects of side diffusion and oxide undercut.

Subject Categories:

  • Solid State Physics
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE