Two Color Narrow Bandwidth Detector.
Patent, Filed 14 Apr 80, patented 16 Feb 82,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This document describes a narrow two color semiconductor detector created from the built in field between epitaxial layers due to interface traps. Opposite polarity on opposite sides of the interface result in a net photocurrent created on each side which flows in opposing directions. The substrate supporting the epitaxial layers provides a cutoff filter range for light entering through the substrate.
- Optical Detection and Detectors
- Solid State Physics