Method of Preparing a Thin-Film, Single-Crystal Photovoltaic Detector.
Patent, Filed 28 Feb 79, patented 26 Jan 82,
DEPARTMENT OF THE NAVY WASHINGTON DC
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A thin-film single-crystal infrared detector exhibiting and increased frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.
- Optical Detection and Detectors
- Electrooptical and Optoelectronic Devices