Method of Forming Thermally Stable High Resistivity Regions in N-Type Indium Phosphide by Oxygen Implantation.
Patent, Filed 12 Dec 85, patented 16 Jun 87,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This invention relates generally to the formation of electrical isolation regions in semiconductive structures and more particularly to thermally stable isolation regions in n-type indium phosphide substrates by oxygen implantation. The necessity for selectively forming electrically isolated regions in certain types of semiconductive structures, such as monolithic integrated circuits is generally well-known. In the absence of providing some type of electrically insulating barrier between closely spaced semiconductive devices andor other IC components fabricated in a common semiconductive substrate, undesirable leakage currents will flow between these devices or components and degrade the electrical performance of the structure, if not render it totally inoperable.
- Electrical and Electronic Equipment
- Solid State Physics