Accession Number:

ADD013245

Title:

Method of Forming Thermally Stable High Resistivity Regions in N-Type Indium Phosphide by Oxygen Implantation.

Descriptive Note:

Patent, Filed 12 Dec 85, patented 16 Jun 87,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1987-06-16

Pagination or Media Count:

6.0

Abstract:

This invention relates generally to the formation of electrical isolation regions in semiconductive structures and more particularly to thermally stable isolation regions in n-type indium phosphide substrates by oxygen implantation. The necessity for selectively forming electrically isolated regions in certain types of semiconductive structures, such as monolithic integrated circuits is generally well-known. In the absence of providing some type of electrically insulating barrier between closely spaced semiconductive devices andor other IC components fabricated in a common semiconductive substrate, undesirable leakage currents will flow between these devices or components and degrade the electrical performance of the structure, if not render it totally inoperable.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE