Monolithic Combined Charge Transfer and Surface Acoustic Wave Device.
Patent, Filed 29 Sep 82, patented 28 Aug 84,
DEPARTMENT OF THE NAVY WASHINGTON DC
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This patent discloses novel technique for fabrication of a new class of surface acoustic wave SAW signal processing devices. Substrates of non-piezoelectric silicon or weakly piezoelectric gallium arsenide are prepared and a thin film of a piezoelectric material, such as zinc oxide, is deposited on the substrate. Interdigital transducers are fabricated at each end of the device to injectreceive SAW signals. A row of P-N diodes is constructed in the substrate underneath the SAW beam path and a metal electrode is deposited on top of the zinc oxide film. The diodes may be serially addressedcontrolled by a variety of devices external to the SAW beam path, but fabricated on the same substrate and the new device used to provide transformation between high-frequency signals and low-frequency signals having the same time-bandwidth product.
- Line, Surface and Bulk Acoustic Wave Devices
- Manufacturing and Industrial Engineering and Control of Production Systems