Accession Number:

ADD013219

Title:

High-Q, Stress-Compensated Crystal Device.

Descriptive Note:

Patent Application, Filed 8 Sep 87,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1987-09-08

Pagination or Media Count:

20.0

Abstract:

A doubly rotated, stress and temperature compensated quartz crystal resonator. The crystal cuts are arbitrarily designated the SK1 and SK2 cuts. Lateral field excitation is used to excite only the b-mode of vibration fast quasi-shear and suppress the c mode slow quasi-shear. Exclusive excitation of the b mode produces a resonator with a higher Q and lower phase noise than otherwise achievable. Patent application

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE