Permeable Base Transistor Structure.
Patent, Filed 23 Aug 82, patented 22 Jan 85,
DEPARTMENT OF THE NAVY WASHINGTON DC
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The performance of the conventional permeable base transistor PBT is improved by configuring its structure so as to eliminate excessive parasitic loses above and below its control grid stucture, to eliminate excessive negative feedback in its source-grid gate region, and to eliminate the requirement for backfill of the trenches over the control grid structure. The improved PBT structure features, inter alia, a collectoranode- drain structure comprising a plurality of Schottky metal contacts, and the aforementioned control grid structure comprising a plurality of Schottky metal control grid elements. Each of the plurality of Schottky metal control grid elements, after fabrication, is shaped like an inverted upper case letter T emplaced in corresponding ones of a plurality of trenches of the improved PBT structure.
- Electrical and Electronic Equipment
- Solid State Physics