Buried Metallic Layer Formed by ION Implantation Specification.
DEPARTMENT OF THE NAVY WASHINGTON DC
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A first object of the invention is to provide an efficient economic method of forming a buried metal layer in a semiconductor substrate. A second object is to provide a strain free metal layer, covered by a strain free silicon layer. A third object is to provide a method of forming temperature stable, low diffusivity silicides in a semi-conductor substrate. A fourth object is to provide faster circuitry capable of handling higher current loads due to buried interconnections and shorter interconnection paths. A fifth object is to provide flexibility in integrated circuit design by having variable depth layers depth being dependent on ion acceleration energies and control of layer placements. A sixth object is to provide epitaxial-like metal growth within a silicon substrate.
- Electrical and Electronic Equipment