Accession Number:

ADD012818

Title:

Buried Metallic Layer Formed by ION Implantation Specification.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1987-03-13

Pagination or Media Count:

11.0

Abstract:

A first object of the invention is to provide an efficient economic method of forming a buried metal layer in a semiconductor substrate. A second object is to provide a strain free metal layer, covered by a strain free silicon layer. A third object is to provide a method of forming temperature stable, low diffusivity silicides in a semi-conductor substrate. A fourth object is to provide faster circuitry capable of handling higher current loads due to buried interconnections and shorter interconnection paths. A fifth object is to provide flexibility in integrated circuit design by having variable depth layers depth being dependent on ion acceleration energies and control of layer placements. A sixth object is to provide epitaxial-like metal growth within a silicon substrate.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE