Accession Number:

ADD012813

Title:

CCD Gate Definition Process.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

• Bluzer,Nathan
• Halvis,James

Report Date:

1987-03-24

Pagination or Media Count:

5.0

Abstract:

This patent discloses a Charge Coupled Device gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any reentrant oxide steps.

Descriptors:

• *PATENTS
• *CHARGE COUPLED DEVICES
• *MASKING
• *GATES(CIRCUITS)
• *POLYSILICONS
• LAYERS
• MATERIALS
• OXIDES
• TAPER
• THIN FILMS
• THINNESS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE