Accession Number:

ADD012807

Title:

Modulation Doped GaAs/AlGaAs Field Effect Transistor.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Report Date:

1987-03-24

Pagination or Media Count:

10.0

Abstract:

To realize a depletion mode modulation doped field effect transistor with high gate length to depletion-depth ratio that is capable of providing high power gain at millimeter wave frequencies, an ohmic gate or a heterojunction gate is used on the n-ALGaAsGaAs layered structure, replacing the prior art Schottky-barrie metal gate. The depletion mode operation is desirable for analog signal amplifying circuits as opposed to the enhancement-mode device commonly used for switching or digital circuits. In the case of Schottky barrier gate, high aspect ratio structures naturally operate in the enhancement mode, hence the need for the change in the gate electrode structure. Patents

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE