Accession Number:

ADD012776

Title:

Method of Making Planar Geometry Schottky Diode Using Oblique Evaporation and Normal Incidence Proton Bombardment.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1987-02-03

Pagination or Media Count:

5.0

Abstract:

This patent discloses a Schottky diode and method of making same in which a n doped layer, an n doped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecutively on a semi-insulating substrate made of the same material. A mesa with acute angled sides is etched on the undoped layer to such a depth that the n doped layer is exposed. A Schottky and ohmic contact are then deposited on opposite sides of the mesa. The exposed n layer is then bombarded with protons at normal incidence.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE