Measurement of Film Thickness of Integrated Circuits.
DEPARTMENT OF THE ARMY WASHINGTON DC
Pagination or Media Count:
A Narrow, high energy, electron beam is caused to impinge upon an integrated circuit. The accelerating voltage of the electron beam is increased in incremental steps 3 or more so that the electrons penetrate into the film and then into the substrate. The transmitted electrons interact with the film and substrate materials to generate distinct X rays. The relative X ray intensities of the film material to that of the substrate material is utilized of the film material to that of the substrate material is utilized to determine the film thickness. Patent application
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