Accession Number:

ADD012731

Title:

Microwave and Millimeter Wave Phase Shifter.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Report Date:

1986-12-16

Pagination or Media Count:

10.0

Abstract:

A variable phase shifter based on the slow-wave effect for operation in the millimeter wave region, comprising a GaAs substrate for mechanical support an n doped semiconductor layer disposed on the GaAs substrate for operation as a first ground plane an n doped semiconductor layer disposed on the n semiconductor layer with a thickness to permit only one mode at millimeter wave frequencies to propagate, while suppressing higher order millimeter wave modes and a Schottky metal microstrip with first and second ends disposed on top or the n doped semiconductor layer. Means are provided in the form of ohmic contacts for electrically connecting the n semiconductor layer to ground electrical potential. These ohmic contacts are disposed on top of the n doped layer, but are provided with a very large surface area contact to the n doped layer in order to significantly reduce the resistance between the ohmic contact and to the n semiconductor layer. Means are included for providing an electrical bias voltage between the Schottky metal microstrip and the n doped layer. The propagating phase velocity of millimeter waves propagating alone the Schottky metal microstrip can be varied in accordance with the bias voltage to obtain a desired phase shift between the first and second ends of the metal microstrip. PATENTS.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE