Accession Number:

ADD012432

Title:

Quantum Well Electron Barrier Diode.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1986-03-13

Pagination or Media Count:

11.0

Abstract:

This patent application relates to electron barrier diodes, and more particularly, to an asymmetric quantum well electron barrier diode. A quantum well electron barrier diode is described which comprises a substrate, a first buffer layer on the substrate, a superlattice structure on the first buffer layer, a second buffer layer on the superlattice structure, a contacting layer on the second buffer layer and first and second ohmic contacts attached to the contacting layer and substrate respectively. The superlattice structure comprises a sequence of a plurality of high energy gap barrier layers interleaved with a plurality of low energy gap wells. The sequence is repeated until the desired thickness is reached. Current flows perpendicular to the layers.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE