Selective Anodic Oxidation of Semiconductors for Pattern Generation.
DEPARTMENT OF THE AIR FORCE WASHINGTON DC
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The present invention relates to GaAs integrated circuit technology, and in particular, to a novel means of controlling oxidation growth rate on anodically oxidized GaAs samples. This abstract discloses an apparatus and a method for selectively controlling anodic oxide growth on semiconductors for controlled electrochemical pattern generation incorporating use of a writing beam of a wavelength which encourages oxide growth and a bias beam at a wavelength which discourages oxide growth. The bias beam is projected on the semiconductor in electrolytic environment to prevent or retard oxide growth while oxide growth is accelerated at points of illumination by means of writing beam.
- *GALLIUM ARSENIDES
- *INTEGRATED CIRCUITS
- ANODIC COATINGS
- PATTERN MAKING
- Electrical and Electronic Equipment
- Solid State Physics