Selectively Etching Microstructures in a Glow Discharge Plasma.
DEPARTMENT OF THE ARMY WASHINGTON DC
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Selective etching of microelectronic devices comprising crystal substrates is achieved by electrically masking conductive areas thereon which are not to be etched by ionic bombardment. The electrical masking is accomplished by biasing the selected areas with a bias voltage which will repel the ions, which are attracted to all of the unbiased portions of the microelectronic device.
- Manufacturing and Industrial Engineering and Control of Production Systems
- Plasma Physics and Magnetohydrodynamics
- Solid State Physics