Accession Number:

ADD012206

Title:

Selectively Etching Microstructures in a Glow Discharge Plasma.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1986-03-17

Pagination or Media Count:

12.0

Abstract:

Selective etching of microelectronic devices comprising crystal substrates is achieved by electrically masking conductive areas thereon which are not to be etched by ionic bombardment. The electrical masking is accomplished by biasing the selected areas with a bias voltage which will repel the ions, which are attracted to all of the unbiased portions of the microelectronic device.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Plasma Physics and Magnetohydrodynamics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE