Accession Number:

ADD012191

Title:

Method of Preparing Single Crystalline Cubic Silicon Carbide Layers.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1985-12-03

Pagination or Media Count:

6.0

Abstract:

This invention pertains to a method of making very pure cubic silicon carbide, SiC, comprising the steps of loading a first inner graphite cup of a Lely type furnace while cold with a large number of crystals of SiC that are used as substrates sealing the first cup with a graphite lid inserting the first cup into a second graphite cup and inserting them into the furnace filling the area between the first cup and the second cup with SiC heating the first cup to between 2300 C. and 2700 C. until an atmosphere saturated with Si, C, SiC2 and Si2C is created and cooling the furnace quickly to a temperature less than 1800 C.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE